Example3 Heat Radiation of IC by Forced Convection

General

  • Heat dissipation of an IC on the substrate by the forced convection is solved by the steady-state analysis.
     

  • The temperature distribution and the heat flux vectors are solved.
     

  • Unless specified in the list below, the default conditions will be applied.
     

  • Obtain this session's project file. (Save the project file before open)

 

Analysis Space

Item

Setting

Analysis Space

3D

Model Unit

mm

 

Show Results

Item

Setting

Solver

Fluid Analysis [Bernoulli]

Thermal analysis [Watt]

Analysis Type

Steady-State Analysis

Laminar Flow/Turbulent Flow

Select Turbulent Flow

Meshing Setup

General Mesh size: 5 [mm]

Model

The model is a box solid body. The material is Air (000_Air). The boundary conditions of inlet and outlet are set on the left edge and the right edge respectively.

The slip wall outer boundary condition is applied to the top and bottom edges where the boundary condition is not set.

The substrate (VOL1) and IC (VOL2) are solid bodies.

 

 

Setting of Body Attributes, Materials, and Mesh Sizes

Body Number/Type

Body Attribute Name

Material Name

Mesh Size

0/Solid

VOL1

006_Glass_epoxy *

0.2

1/Solid

VOL2

001_Alumina *

0.2

2/Solid

Air

000_Air(*)

* Available from the material DB

 

IC (VOL2) is set as follows on the Heat source tab.

Body Attribute Name

Tab

Setting

VOL2

Heat Source

1W

Boundary Condition

Boundary Condition Name/Topology

Tab

Boundary Condition Type

Setting

In/Edge

Thermal Fluid

Inlet

Forced Inflow
Specify fluid velocity
1[m/s]

Inflow Temperature : 25[deg]

Out/Face

Thermal Fluid

Outlet

Natural Outflow

Outer Boundary Condition

Thermal Fluid

Slip wall

 

Results

The temperature distribution is shown below.

For easy viewing of the temperature distributions of the substrate and the IC, the ambient air field is hidden by right-clicking the air body and selecting [Hide Body Field].

As the upstream side is more likely to get cooler, the temperature distribution is biased. The temperature on the downstream side of the substrate surface is higher than the upstream side.